Littelfuse LSIC1MO170T0750 SiC N-Channel MOSFET, 4.5 A, 1700 V, 7-Pin D2PAK LSIC1MO170T0750-TU
- RS Stock No.:
- 223-3051P
- Mfr. Part No.:
- LSIC1MO170T0750-TU
- Brand:
- Littelfuse
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£72.60
(exc. VAT)
£87.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 23 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
10 - 24 | £7.26 |
25 - 99 | £6.60 |
100 - 249 | £5.97 |
250 + | £5.48 |
*price indicative
- RS Stock No.:
- 223-3051P
- Mfr. Part No.:
- LSIC1MO170T0750-TU
- Brand:
- Littelfuse
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Littelfuse | |
Channel Type | N | |
Maximum Continuous Drain Current | 4.5 A | |
Maximum Drain Source Voltage | 1700 V | |
Package Type | TO-263-7 | |
Series | LSIC1MO170T0750 | |
Mounting Type | Surface Mount | |
Pin Count | 7 | |
Maximum Drain Source Resistance | 0.75 O | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.8V | |
Number of Elements per Chip | 1 | |
Transistor Material | SiC | |
Select all | ||
---|---|---|
Brand Littelfuse | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.5 A | ||
Maximum Drain Source Voltage 1700 V | ||
Package Type TO-263-7 | ||
Series LSIC1MO170T0750 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 0.75 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.8V | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Littelfuse new 1700V, 750mOhm Silicon Carbide (SiC) MOSFETs are presented in TO-263-7L package. The separated source pin reduces significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175 °C.
These MOSFETs are ideal for high frequency applications in which high efficiency is desired.
These MOSFETs are ideal for high frequency applications in which high efficiency is desired.
Optimized for high-frequency, high-efficiency applications
Extremely low gate charge and output
capacitance
Low gate resistance for high-frequency switching
Normally-off operations at all temperatures
Ultra-low on-resistance
Optimized package with separate driver source pin
MSL 1 Rated
Extremely low gate charge and output
capacitance
Low gate resistance for high-frequency switching
Normally-off operations at all temperatures
Ultra-low on-resistance
Optimized package with separate driver source pin
MSL 1 Rated