Infineon CoolMOS™ P7 N-Channel MOSFET, 46 A, 650 V, 3-Pin D2PAK IPB65R045C7ATMA2
- RS Stock No.:
- 222-4897P
- Mfr. Part No.:
- IPB65R045C7ATMA2
- Brand:
- Infineon
Bulk discount available
Subtotal 5 units (supplied on a continuous strip)*
£36.95
(exc. VAT)
£44.35
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 948 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
5 - 9 | £7.39 |
10 - 24 | £7.08 |
25 - 49 | £6.77 |
50 + | £6.30 |
*price indicative
- RS Stock No.:
- 222-4897P
- Mfr. Part No.:
- IPB65R045C7ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 46 A | |
Maximum Drain Source Voltage | 650 V | |
Series | CoolMOS™ P7 | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 45 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 46 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ P7 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 45 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
Improved safety margin and suitable for both SMPS and solar inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Outstanding CoolMOS™ quality
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Outstanding CoolMOS™ quality