Infineon CoolMOS™ C7 N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-220 FP IPA65R045C7XKSA1
- RS Stock No.:
- 222-4881
- Mfr. Part No.:
- IPA65R045C7XKSA1
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£283.60
(exc. VAT)
£340.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 400 unit(s) shipping from 20 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £5.672 | £283.60 |
*price indicative
- RS Stock No.:
- 222-4881
- Mfr. Part No.:
- IPA65R045C7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220 FP | |
| Series | CoolMOS™ C7 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 45 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 FP | ||
Series CoolMOS™ C7 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 45 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
Improved safety margin and suitable for both SMPS and solar inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Outstanding CoolMOS™ quality
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Outstanding CoolMOS™ quality
