Infineon IMBF1 N-Channel MOSFET, 7.4 A, 1700 V, 7-Pin D2PAK IMBF170R650M1XTMA1
- RS Stock No.:
- 222-4851P
- Mfr. Part No.:
- IMBF170R650M1XTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
£77.70
(exc. VAT)
£93.24
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,730 unit(s) ready to ship
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Units | Per unit |
---|---|
20 - 48 | £3.885 |
50 - 98 | £3.63 |
100 - 198 | £3.375 |
200 + | £3.115 |
*price indicative
- RS Stock No.:
- 222-4851P
- Mfr. Part No.:
- IMBF170R650M1XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 7.4 A | |
Maximum Drain Source Voltage | 1700 V | |
Series | IMBF1 | |
Package Type | TO-263-7 | |
Mounting Type | Surface Mount | |
Pin Count | 7 | |
Maximum Drain Source Resistance | 650 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.4 A | ||
Maximum Drain Source Voltage 1700 V | ||
Series IMBF1 | ||
Package Type TO-263-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 650 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
The Infineon CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.
Optimized for fly-back topologies
Extremely low switching loss
12 V / 0 V gate-source voltage compatible with fly-back controllers
Fully controllable dV/dt for EMI optimization
SMD package with enhanced creepage and clearance distances, > 7 mm
Extremely low switching loss
12 V / 0 V gate-source voltage compatible with fly-back controllers
Fully controllable dV/dt for EMI optimization
SMD package with enhanced creepage and clearance distances, > 7 mm