Infineon IMBF1 N-Channel MOSFET, 5.2 A, 1700 V, 7-Pin D2PAK IMBF170R1K0M1XTMA1
- RS Stock No.:
- 222-4849P
- Mfr. Part No.:
- IMBF170R1K0M1XTMA1
- Brand:
- Infineon
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Subtotal 20 units (supplied on a continuous strip)*
£55.80
(exc. VAT)
£67.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 832 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 20 - 48 | £2.79 |
| 50 - 98 | £2.585 |
| 100 - 198 | £2.42 |
| 200 + | £2.25 |
*price indicative
- RS Stock No.:
- 222-4849P
- Mfr. Part No.:
- IMBF170R1K0M1XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.2 A | |
| Maximum Drain Source Voltage | 1700 V | |
| Package Type | TO-263-7 | |
| Series | IMBF1 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 1000 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.2 A | ||
Maximum Drain Source Voltage 1700 V | ||
Package Type TO-263-7 | ||
Series IMBF1 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 1000 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
The Infineon CoolSiC™ 1700 V, 1000 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.
Optimized for fly-back topologies
Extremely low switching loss
12 V / 0 V gate-source voltage compatible with fly-back controllers
Fully controllable dV/dt for EMI optimization
SMD package with enhanced creepage and clearance distances, > 7 mm
Extremely low switching loss
12 V / 0 V gate-source voltage compatible with fly-back controllers
Fully controllable dV/dt for EMI optimization
SMD package with enhanced creepage and clearance distances, > 7 mm
