Infineon FF6MR N-Channel MOSFET, 250 A, 1200 V AG-62MM FF6MR12KM1BOSA1
- RS Stock No.:
- 222-4796P
- Mfr. Part No.:
- FF6MR12KM1BOSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 2 units (supplied in a tray)*
£1,345.90
(exc. VAT)
£1,615.08
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 28 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
2 - 2 | £672.95 |
3 + | £644.62 |
*price indicative
- RS Stock No.:
- 222-4796P
- Mfr. Part No.:
- FF6MR12KM1BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 250 A | |
Maximum Drain Source Voltage | 1200 V | |
Package Type | AG-62MM | |
Series | FF6MR | |
Mounting Type | Screw Mount | |
Maximum Drain Source Resistance | 5.81 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.45V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 250 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type AG-62MM | ||
Series FF6MR | ||
Mounting Type Screw Mount | ||
Maximum Drain Source Resistance 5.81 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.45V | ||
Number of Elements per Chip 1 | ||
The Infineon 62 mm 1200 V, 6 mΩ half bridge module with Cool Sic™ MOSFET.
High current density
Low switching losses
Superior gate oxide reliability
Highest robustness against humidity
Robust integrated body diode, and thus optimal thermal conditions
Low switching losses
Superior gate oxide reliability
Highest robustness against humidity
Robust integrated body diode, and thus optimal thermal conditions