Infineon HEXFET Silicon N-Channel MOSFET, 557 A, 40 V, 7-Pin D2PAK-7 IRL40SC228
- RS Stock No.:
- 222-4755P
- Mfr. Part No.:
- IRL40SC228
- Brand:
- Infineon
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Subtotal 25 units (supplied on a continuous strip)*
£71.40
(exc. VAT)
£85.675
(inc. VAT)
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In Stock
- 440 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 25 - 45 | £2.856 |
| 50 - 120 | £2.652 |
| 125 - 245 | £2.482 |
| 250 + | £2.312 |
*price indicative
- RS Stock No.:
- 222-4755P
- Mfr. Part No.:
- IRL40SC228
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 557 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | HEXFET | |
| Package Type | D2PAK-7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 0.00065 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 416 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ± 20 V | |
| Width | 9.65mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.54mm | |
| Typical Gate Charge @ Vgs | 205 nC | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Silicon | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 557 A | ||
Maximum Drain Source Voltage 40 V | ||
Series HEXFET | ||
Package Type D2PAK-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 0.00065 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 416 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ± 20 V | ||
Width 9.65mm | ||
Number of Elements per Chip 1 | ||
Length 10.54mm | ||
Typical Gate Charge @ Vgs 205 nC | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Silicon | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 4.83mm | ||
Infineon HEXFET Series MOSFET, 557A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRL40SC228
This high power MOSFET is designed for various applications requiring robust performance and efficiency. It features a compact D2PAK-7 surface mount package, ensuring convenient installation in space-constrained environments. With a continuous drain current capability of 557A and a maximum drain-source voltage of 40V, its dimensions measure 10.54mm in length, 9.65mm in width, and 4.83mm in height.
Features & Benefits
• Optimised for logic level drive for enhanced compatibility
• Low RDS(on) of 0.50mΩ for reduced power loss
• High current capacity up to 557A for demanding applications
• Versatile applications in motor drives and power supplies
• Low RDS(on) of 0.50mΩ for reduced power loss
• High current capacity up to 557A for demanding applications
• Versatile applications in motor drives and power supplies
Applications
• Suitable for brushed and BLDC motor drive circuits
• Ideal for battery-powered electronic systems
• Utilised in half-bridge and full-bridge circuit topologies
• Effective as a synchronous rectifier in power supply
• Used in DC-DC and AC-DC converters
• Ideal for battery-powered electronic systems
• Utilised in half-bridge and full-bridge circuit topologies
• Effective as a synchronous rectifier in power supply
• Used in DC-DC and AC-DC converters
What are the key benefits of using this device in high-current applications?
The device's low on-resistance significantly improves efficiency, allowing for higher current flow without substantial heat generation. This supports reliability and performance in demanding situations where current capacity is critical.
How does this MOSFET perform under high temperature conditions?
It operates effectively across a wide temperature range from -55°C to +175°C, ensuring stability and functionality even under extreme operating conditions.
What features enhance the robustness of this MOSFET during operation?
Enhanced gate and avalanche ruggedness protect it from voltage spikes, while its low dynamic dV/dt capabilities contribute to consistent performance in rapidly changing conditions.
