Infineon HEXFET Silicon N-Channel MOSFET, 16 A, 110 V, 3-Pin DPAK IRFR3910TRLPBF
- RS Stock No.:
- 222-4753
- Mfr. Part No.:
- IRFR3910TRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£9.96
(exc. VAT)
£11.96
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 20 unit(s) shipping from 20 October 2025
- Plus 6,280 unit(s) shipping from 27 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.498 | £9.96 |
| 100 - 180 | £0.413 | £8.26 |
| 200 - 480 | £0.388 | £7.76 |
| 500 - 980 | £0.358 | £7.16 |
| 1000 + | £0.341 | £6.82 |
*price indicative
- RS Stock No.:
- 222-4753
- Mfr. Part No.:
- IRFR3910TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 16 A | |
| Maximum Drain Source Voltage | 110 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.000115 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 110 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.000115 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
