Infineon HEXFET Silicon N-Channel MOSFET, 80 A, 40 V, 4-Pin TO-220 Full-Pak IRFI7446GPBF

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RS will no longer stock this product.
Packaging Options:
RS Stock No.:
222-4749
Mfr. Part No.:
IRFI7446GPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Series

HEXFET

Package Type

TO-220 Full-Pak

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

0.0033 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-Free, RoHS compliant