Infineon HEXFET Silicon N-Channel MOSFET, 81 A, 20 V DirectFET ISOMETRIC IRF6636TRPBF

Bulk discount available

Subtotal 50 units (supplied on a continuous strip)*

£63.90

(exc. VAT)

£76.70

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 21 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
50 - 90£1.278
100 - 240£1.224
250 - 490£1.17
500 +£1.089

*price indicative

Packaging Options:
RS Stock No.:
222-4739P
Mfr. Part No.:
IRF6636TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

81 A

Maximum Drain Source Voltage

20 V

Package Type

DirectFET ISOMETRIC

Series

HEXFET

Mounting Type

Surface Mount

Maximum Drain Source Resistance

0.0064 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.45V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

100% Rg tested Low Conduction and Switching Losses
Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters