Infineon HEXFET Silicon N-Channel MOSFET, 150 A, 20 V DirectFET ISOMETRIC IRF6620TRPBF
- RS Stock No.:
- 222-4737P
- Mfr. Part No.:
- IRF6620TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£48.25
(exc. VAT)
£57.90
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 22 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 90 | £0.965 |
| 100 - 240 | £0.868 |
| 250 - 490 | £0.781 |
| 500 + | £0.743 |
*price indicative
- RS Stock No.:
- 222-4737P
- Mfr. Part No.:
- IRF6620TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 150 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | HEXFET | |
| Package Type | DirectFET ISOMETRIC | |
| Mounting Type | Surface Mount | |
| Maximum Drain Source Resistance | 0.0036 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.45V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 150 A | ||
Maximum Drain Source Voltage 20 V | ||
Series HEXFET | ||
Package Type DirectFET ISOMETRIC | ||
Mounting Type Surface Mount | ||
Maximum Drain Source Resistance 0.0036 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.45V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
100% Rg tested Low Conduction and Switching Losses
Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters
Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters
