Infineon CoolMOS™ Silicon N-Channel MOSFET, 76 A, 600 V, 4-Pin TO-247-4 IPZA60R037P7XKSA1

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Subtotal 5 units (supplied in a tube)*

£38.80

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£46.55

(inc. VAT)

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5 - 9£7.76
10 - 24£7.43
25 - 49£7.11
50 +£6.62

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Packaging Options:
RS Stock No.:
222-4731P
Mfr. Part No.:
IPZA60R037P7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.037 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of Cool MOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies.

Excellent ESD robustness >2kV (HBM) for all products
Significant reduction of switching and conduction losses Excellent ESD robustness >2kV (HBM) for all products