Infineon CoolMOS™ Silicon N-Channel MOSFET, 109 A, 600 V, 4-Pin TO-247-4 IPZ60R017C7XKSA1

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Subtotal 2 units (supplied in a tube)*

£25.66

(exc. VAT)

£30.80

(inc. VAT)

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2 - 4£12.83
5 - 9£12.29
10 - 24£11.75
25 +£10.94

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Packaging Options:
RS Stock No.:
222-4727P
Mfr. Part No.:
IPZ60R017C7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

109 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247-4

Series

CoolMOS™

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.017 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm.

Pb-free lead plating

RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23