Infineon CoolMOS™ Silicon N-Channel MOSFET, 8.5 A, 700 V, 3-Pin IPAK IPSA70R600P7SAKMA1

Bulk discount available

Subtotal 100 units (supplied in a tube)*

£48.50

(exc. VAT)

£58.20

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 14 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
100 - 180£0.485
200 - 480£0.454
500 - 980£0.423
1000 +£0.391

*price indicative

Packaging Options:
RS Stock No.:
222-4713P
Mfr. Part No.:
IPSA70R600P7SAKMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

8.5 A

Maximum Drain Source Voltage

700 V

Series

CoolMOS™

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour