Infineon CoolMOS™ Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1

Bulk discount available

Subtotal 50 units (supplied on a continuous strip)*

£45.35

(exc. VAT)

£54.40

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 1,980 unit(s), ready to ship
Units
Per unit
50 - 90£0.907
100 - 240£0.869
250 - 490£0.831
500 +£0.774

*price indicative

Packaging Options:
RS Stock No.:
222-4671P
Mfr. Part No.:
IPD60R280CFD7ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.28 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications