Infineon OptiMOS™ Silicon N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK IPD30N06S215ATMA2

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Subtotal 100 units (supplied on a continuous strip)*

£83.70

(exc. VAT)

£100.40

(inc. VAT)

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100 - 240£0.837
250 - 490£0.80
500 - 990£0.766
1000 +£0.714

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Packaging Options:
RS Stock No.:
222-4664P
Mfr. Part No.:
IPD30N06S215ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

55 V

Package Type

TO-252

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0147 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications