Infineon CoolMOS™ Silicon N-Channel MOSFET, 50 A, 650 V, 3-Pin TO 263 IPB60R040C7ATMA1
- RS Stock No.:
- 222-4651P
- Mfr. Part No.:
- IPB60R040C7ATMA1
- Brand:
- Infineon
Save 14% when you buy 100 units
Subtotal 10 units (supplied on a continuous strip)*
£76.30
(exc. VAT)
£91.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 795 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 - 24 | £7.63 |
| 25 - 49 | £7.31 |
| 50 - 99 | £6.99 |
| 100 + | £6.51 |
*price indicative
- RS Stock No.:
- 222-4651P
- Mfr. Part No.:
- IPB60R040C7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO 263 | |
| Series | CoolMOS™ | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.04 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO 263 | ||
Series CoolMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.04 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/ns
Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on) /package
Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on) /package
