Infineon CoolMOS™ Silicon N-Channel MOSFET, 6 A, 700 V, 3-Pin TO-220 FP IPA70R900P7SXKSA1

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Subtotal 75 units (supplied in a tube)*

£41.325

(exc. VAT)

£49.575

(inc. VAT)

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Units
Per unit
75 - 135£0.551
150 - 360£0.529
375 - 735£0.505
750 +£0.471

*price indicative

Packaging Options:
RS Stock No.:
222-4644P
Mfr. Part No.:
IPA70R900P7SXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

700 V

Series

CoolMOS™

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode