Infineon CoolMOS™ Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin TO-220 FP IPA60R180C7XKSA1
- RS Stock No.:
- 222-4642P
- Mfr. Part No.:
- IPA60R180C7XKSA1
- Brand:
- Infineon
Save 18% when you buy 250 units
Subtotal 25 units (supplied in a tube)*
£55.60
(exc. VAT)
£66.725
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 455 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 45 | £2.224 |
| 50 - 120 | £2.074 |
| 125 - 245 | £1.926 |
| 250 + | £1.804 |
*price indicative
- RS Stock No.:
- 222-4642P
- Mfr. Part No.:
- IPA60R180C7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS™ | |
| Package Type | TO-220 FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.18 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ | ||
Package Type TO-220 FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.18 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for standard grade applications according to JEDEC standards
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for standard grade applications according to JEDEC standards
