Infineon CoolMOS™ Silicon N-Channel MOSFET, 37.9 A, 650 V, 3-Pin TO-220 FP IPA60R099P6XKSA1
- RS Stock No.:
- 222-4640P
- Mfr. Part No.:
- IPA60R099P6XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 20 units (supplied in a tube)*
£67.40
(exc. VAT)
£80.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 898 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 48 | £3.37 |
| 50 - 98 | £3.15 |
| 100 - 198 | £2.93 |
| 200 + | £2.74 |
*price indicative
- RS Stock No.:
- 222-4640P
- Mfr. Part No.:
- IPA60R099P6XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 37.9 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220 FP | |
| Series | CoolMOS™ | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.099 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 37.9 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 FP | ||
Series CoolMOS™ | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.099 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Pb-free plating Halogen free mold compound
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Pb-free plating Halogen free mold compound
