Infineon CoolGaN Silicon N-Channel MOSFET, 12.5 A, 600 V, 8-Pin HSOF-8 IGT60R190D1SATMA1
- RS Stock No.:
- 222-4638P
- Mfr. Part No.:
- IGT60R190D1SATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£122.20
(exc. VAT)
£146.60
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 03 September 2027
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Units | Per unit |
|---|---|
| 10 - 99 | £12.22 |
| 100 - 249 | £11.26 |
| 250 - 499 | £10.47 |
| 500 + | £10.17 |
*price indicative
- RS Stock No.:
- 222-4638P
- Mfr. Part No.:
- IGT60R190D1SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12.5 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | HSOF-8 | |
| Series | CoolGaN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.19 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.6V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 12.5 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type HSOF-8 | ||
Series CoolGaN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.19 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.6V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Pb-free plating Halogen free mold compound
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Pb-free plating Halogen free mold compound
