Infineon OptiMOS™ 5 Silicon N-Channel MOSFET, 60 A, 100 V, 8-Pin SuperSO8 5 x 6 BSC098N10NS5ATMA1

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Subtotal 50 units (supplied on a continuous strip)*

£39.80

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£47.75

(inc. VAT)

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50 - 90£0.796
100 - 240£0.763
250 - 490£0.729
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Packaging Options:
RS Stock No.:
222-4622P
Mfr. Part No.:
BSC098N10NS5ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

100 V

Package Type

SuperSO8 5 x 6

Series

OptiMOS™ 5

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0098 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating

RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23