Infineon HEXFET Silicon N-Channel MOSFET, 9.3 A, 250 V, 3-Pin DPAK AUIRFR4292TRL

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Subtotal 50 units (supplied on a continuous strip)*

£67.45

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£80.95

(inc. VAT)

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50 - 90£1.349
100 - 240£1.292
250 - 490£1.235
500 +£1.15

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Packaging Options:
RS Stock No.:
222-4614P
Mfr. Part No.:
AUIRFR4292TRL
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.3 A

Maximum Drain Source Voltage

250 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.345 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant