Infineon HEXFET Silicon N-Channel MOSFET, 3 A, 50 V, 8-Pin SO-8 AUIRF7103QTR
- RS Stock No.:
- 222-4608P
- Mfr. Part No.:
- AUIRF7103QTR
- Brand:
- Infineon
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£117.50
(exc. VAT)
£141.00
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 2,280 unit(s), ready to ship
Units | Per unit |
---|---|
100 - 240 | £1.175 |
250 - 490 | £1.126 |
500 - 990 | £1.076 |
1000 + | £1.002 |
*price indicative
- RS Stock No.:
- 222-4608P
- Mfr. Part No.:
- AUIRF7103QTR
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 3 A | |
Maximum Drain Source Voltage | 50 V | |
Series | HEXFET | |
Package Type | SO-8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.13 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 50 V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.13 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
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