Infineon HEXFET Silicon N-Channel MOSFET, 3 A, 50 V, 8-Pin SO-8 AUIRF7103QTR

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Subtotal 100 units (supplied on a continuous strip)*

£117.50

(exc. VAT)

£141.00

(inc. VAT)

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100 - 240£1.175
250 - 490£1.126
500 - 990£1.076
1000 +£1.002

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Packaging Options:
RS Stock No.:
222-4608P
Mfr. Part No.:
AUIRF7103QTR
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

50 V

Series

HEXFET

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.13 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Advanced Planar Technology
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive