Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 77 A, 40 V, 3-Pin DPAK IRFR3504ZTRPBF

Subtotal 10 units (supplied on a continuous strip)*

£6.90

(exc. VAT)

£8.30

(inc. VAT)

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Packaging Options:
RS Stock No.:
220-7494P
Mfr. Part No.:
IRFR3504ZTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

77 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.009 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
Silicon optimized for applications switching below <100kHz
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
High performance in low frequency applications