Infineon CoolMOS™ P7 N-Channel MOSFET Transistor & Diode, 4 A, 950 V, 3-Pin IPAK IPU95R2K0P7AKMA1
- RS Stock No.:
- 220-7452P
- Mfr. Part No.:
- IPU95R2K0P7AKMA1
- Brand:
- Infineon
Subtotal 15 units (supplied in a tube)*
£8.715
(exc. VAT)
£10.455
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 4,455 unit(s) shipping from 06 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 15 + | £0.581 |
*price indicative
- RS Stock No.:
- 220-7452P
- Mfr. Part No.:
- IPU95R2K0P7AKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 950 V | |
| Package Type | IPAK (TO-251) | |
| Series | CoolMOS™ P7 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 950 V | ||
Package Type IPAK (TO-251) | ||
Series CoolMOS™ P7 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
The Infineon IPU95R2K0P7 designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS P7 technology focuses on the low-power SMPS market. It offer 50V more blocking voltage than its predecessor 900V Cool MOS C3, the 950V Cool MOS P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V Cool MOS P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. Cool MOS P7 is developed with best-in-class VGS(the) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.
Best-in-class FOM RDS(on) Eoss
reduced Qg, Ciss and Coss
Best-in-class DPAK RDS(on) of 450 mΩ
Best-in-class VGS(the) of 3V and smallest VGS(the) variation of ±0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Best-in-class DPAK RDS(on) of 450 mΩ
Best-in-class VGS(the) of 3V and smallest VGS(the) variation of ±0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
