Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin DPAK IPD30N06S4L23ATMA2

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Subtotal 100 units (supplied on a continuous strip)*

£38.70

(exc. VAT)

£46.40

(inc. VAT)

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100 - 180£0.387
200 - 480£0.362
500 - 980£0.337
1000 +£0.312

*price indicative

Packaging Options:
RS Stock No.:
220-7404P
Mfr. Part No.:
IPD30N06S4L23ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Package Type

TO-252

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.023 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

16V

Number of Elements per Chip

1

The Infineon offers a wide range of 55V-60V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages and ranging RDS(on) from 1.5mΩ up to 160mΩThe new 60V automotive MOSFET family with OptiMOS5 technology delivers more power and leading performance. OptiMOS 5 provides reduced conduction losses optimized for drives and power conversion applications. The smaller leadless packages SSO8 (5x6mm2) and S3O8(3x3mm2) enable space savings by more than 50% compared to the area of a DPAK.

N-channel - Enhancement mode
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
world's lowest RDS at 60V (on)
highest current capability
lowest switching and conduction power losses for highest thermal efficiency
robust packages with superior quality and reliability
Optimized total gate charge enables smaller driver output stages