Infineon CoolMOS™ N-Channel MOSFET Transistor & Diode, 145 A, 700 V, 3-Pin D2PAK IPB65R065C7ATMA2
- RS Stock No.:
- 220-7391P
- Mfr. Part No.:
- IPB65R065C7ATMA2
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£45.40
(exc. VAT)
£54.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 850 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 18 | £4.54 |
| 20 - 48 | £4.225 |
| 50 - 98 | £3.965 |
| 100 + | £3.645 |
*price indicative
- RS Stock No.:
- 220-7391P
- Mfr. Part No.:
- IPB65R065C7ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 145 A | |
| Maximum Drain Source Voltage | 700 V | |
| Series | CoolMOS™ | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.065 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 145 A | ||
Maximum Drain Source Voltage 700 V | ||
Series CoolMOS™ | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.065 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
The Infineon Cool MOS C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
650V voltage
Revolutionary best-in-class R DS(on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Revolutionary best-in-class R DS(on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
