Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 180 A, 80 V, 3-Pin D2PAK IPB019N08N3GATMA1
- RS Stock No.:
- 220-7376P
- Mfr. Part No.:
- IPB019N08N3GATMA1
- Brand:
- Infineon
Subtotal 2 units (supplied on a continuous strip)*
£3.30
(exc. VAT)
£3.96
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,000 unit(s) shipping from 25 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 2 + | £1.65 |
*price indicative
- RS Stock No.:
- 220-7376P
- Mfr. Part No.:
- IPB019N08N3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 180 A | |
| Maximum Drain Source Voltage | 80 V | |
| Series | OptiMOS™ 3 | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.0019 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 80 V | ||
Series OptiMOS™ 3 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0019 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
Optimized technology for DC-DC converters
Excellent gate charge x R DS(ON) product (FOM)
Superior thermal resistance
Dual sided cooling
Low parasitic inductance
Low profile (<0,7mm)
N-channel, normal level
Excellent gate charge x R DS(ON) product (FOM)
Superior thermal resistance
Dual sided cooling
Low parasitic inductance
Low profile (<0,7mm)
N-channel, normal level
