Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin D2PAK IPB015N04NGATMA1
- RS Stock No.:
- 220-7374P
- Mfr. Part No.:
- IPB015N04NGATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£36.42
(exc. VAT)
£43.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,970 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 95 | £3.642 |
| 100 - 245 | £3.364 |
| 250 - 495 | £3.128 |
| 500 + | £3.036 |
*price indicative
- RS Stock No.:
- 220-7374P
- Mfr. Part No.:
- IPB015N04NGATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | D2PAK (TO-263) | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.0015 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type D2PAK (TO-263) | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0015 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter.
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Ideal for fast switching applications
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot
Very low on-resistance R DS(on)
Ideal for fast switching applications
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot
