Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode, 40 A, 60 V, 8-Pin PQFN 3 x 3 BSZ100N06NSATMA1
- RS Stock No.:
- 220-7362P
- Mfr. Part No.:
- BSZ100N06NSATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£53.60
(exc. VAT)
£64.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,400 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 180 | £0.536 |
| 200 - 480 | £0.513 |
| 500 - 980 | £0.491 |
| 1000 + | £0.457 |
*price indicative
- RS Stock No.:
- 220-7362P
- Mfr. Part No.:
- BSZ100N06NSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | OptiMOS™ | |
| Package Type | PQFN 3 x 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.001 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.3V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 60 V | ||
Series OptiMOS™ | ||
Package Type PQFN 3 x 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.001 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.3V | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Optimized for synchronous rectification
40% lower R DS(on) than alternative devices
40% improvement of FOM over similar devices
RoHS compliant - halogen free
MSL1 rated
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot
40% lower R DS(on) than alternative devices
40% improvement of FOM over similar devices
RoHS compliant - halogen free
MSL1 rated
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot
