Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 180 A, 100 V, 3-Pin TO-247AC AUIRFP4110

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Subtotal 10 units (supplied in a tube)*

£42.10

(exc. VAT)

£50.50

(inc. VAT)

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10 - 18£4.21
20 - 48£3.925
50 - 98£3.64
100 +£3.405

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Packaging Options:
RS Stock No.:
220-7345P
Mfr. Part No.:
AUIRFP4110
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Package Type

TO-247AC

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.045 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

2

The Infineon AUIRFP4110 specifically designed for Automotive applications, this HEXFET power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology
Ultra-low on-resistance
175°C operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax