Infineon HEXFET N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRRPBF
- RS Stock No.:
- 218-3118P
- Mfr. Part No.:
- IRFS3307ZTRRPBF
- Brand:
- Infineon
Subtotal 10 units (supplied on a continuous strip)*
£13.84
(exc. VAT)
£16.61
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2,380 unit(s) shipping from 10 November 2025
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Units | Per unit |
|---|---|
| 10 + | £1.384 |
*price indicative
- RS Stock No.:
- 218-3118P
- Mfr. Part No.:
- IRFS3307ZTRRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 128 A | |
| Maximum Drain Source Voltage | 75 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.0058 Ω | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 128 A | ||
Maximum Drain Source Voltage 75 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0058 Ω | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon HEXFET series single N-Channel Power MOSFET integrated with D2PAK (TO-263) type package.
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Enhanced body diode dV/dt and dI/dt Capability
