Infineon HEXFET N-Channel MOSFET, 6 A, 500 V, 3-Pin DPAK IRFR825TRPBF
- RS Stock No.:
- 218-3116P
- Mfr. Part No.:
- IRFR825TRPBF
- Brand:
- Infineon
Currently unavailable
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- RS Stock No.:
- 218-3116P
- Mfr. Part No.:
- IRFR825TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | DPAK (TO-252) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.3 Ω | |
| Maximum Gate Threshold Voltage | 5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.3 Ω | ||
Maximum Gate Threshold Voltage 5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon HEXFET series single N-channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in UPS, SMPS etc.
Lower gate charge results in simpler drive requirements.
Higher gate voltage threshold offers improved noise immunity.
Higher gate voltage threshold offers improved noise immunity.
