Infineon HEXFET N-Channel MOSFET, 27 A, 55 V, 3-Pin DPAK IRFR4105TRPBF
- RS Stock No.:
- 218-3111P
- Mfr. Part No.:
- IRFR4105TRPBF
- Brand:
- Infineon
Subtotal 25 units (supplied on a continuous strip)*
£15.55
(exc. VAT)
£18.65
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 10,225 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 + | £0.622 |
*price indicative
- RS Stock No.:
- 218-3111P
- Mfr. Part No.:
- IRFR4105TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 27 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.045 Ω | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 27 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.045 Ω | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon HEXFET series 55V N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering technique.
Ultra Low On-Resistance
Fast Switching
Lead free
Fast Switching
Lead free
