Infineon CoolMOS™ CFD7 N-Channel MOSFET, 18 A, 600 V, 3-Pin TO-220 IPP60R125CFD7XKSA1
- RS Stock No.:
- 218-3067P
- Mfr. Part No.:
- IPP60R125CFD7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£26.20
(exc. VAT)
£31.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 435 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 20 | £2.62 |
| 25 - 45 | £2.444 |
| 50 - 120 | £2.27 |
| 125 + | £2.124 |
*price indicative
- RS Stock No.:
- 218-3067P
- Mfr. Part No.:
- IPP60R125CFD7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | CoolMOS™ CFD7 | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.125 Ω | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 600 V | ||
Series CoolMOS™ CFD7 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.125 Ω | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon 600V CoolMOS CFD7 N-Channel Power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon technologies.
Ultra-fast body diode
Low gate charge
Best-in-class reverse recovery charge (Qrr)
Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
Low gate charge
Best-in-class reverse recovery charge (Qrr)
Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
