Infineon CoolMOS™ P7 N-Channel MOSFET, 8.5 A, 700 V, 3-Pin SOT-223 IPN70R600P7SATMA1
- RS Stock No.:
- 218-3065P
- Mfr. Part No.:
- IPN70R600P7SATMA1
- Brand:
- Infineon
Subtotal 25 units (supplied on a continuous strip)*
£10.15
(exc. VAT)
£12.175
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5,950 unit(s) ready to ship
- Plus 999,994,025 unit(s) shipping from 10 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 + | £0.406 |
*price indicative
- RS Stock No.:
- 218-3065P
- Mfr. Part No.:
- IPN70R600P7SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8.5 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | SOT-223 | |
| Series | CoolMOS™ P7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.6 Ω | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.5 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type SOT-223 | ||
Series CoolMOS™ P7 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.6 Ω | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon 700V CoolMOS™ N-channel power MOSFET. The latest CoolMOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching Superjunction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level.
Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss
Excellent thermal behaviour
Integrated ESD protection diode
Low switching losses (Eoss)
Excellent thermal behaviour
Integrated ESD protection diode
Low switching losses (Eoss)
