Infineon CoolMOS™ CE N-Channel MOSFET, 4.8 A, 500 V, 3-Pin DPAK IPD50R1K4CEAUMA1

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Subtotal 100 units (supplied on a continuous strip)*

£26.20

(exc. VAT)

£31.40

(inc. VAT)

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100 - 200£0.262
250 - 450£0.244
500 - 1200£0.229
1250 +£0.211

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Packaging Options:
RS Stock No.:
218-3047P
Mfr. Part No.:
IPD50R1K4CEAUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4.8 A

Maximum Drain Source Voltage

500 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon 500V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. This series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound