Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2
- RS Stock No.:
- 218-3032
- Mfr. Part No.:
- IPB120N06S4H1ATMA2
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£1,440.00
(exc. VAT)
£1,730.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,000 unit(s) shipping from 13 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £1.44 | £1,440.00 |
*price indicative
- RS Stock No.:
- 218-3032
- Mfr. Part No.:
- IPB120N06S4H1ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | D2PAK (TO-263) | |
| Series | OptiMOS™ -T2 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.002 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Series OptiMOS™ -T2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.002 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.
N-channel - Enhancement mode
175°C operating temperature
100% Avalanche tested
175°C operating temperature
100% Avalanche tested
