Infineon OptiMOS™ 5 N-Channel MOSFET, 17 A, 30 V, 8-Pin TSDSON-8 FL BSZ0589NSATMA1
- RS Stock No.:
- 218-2984P
- Mfr. Part No.:
- BSZ0589NSATMA1
- Brand:
- Infineon
Subtotal 20 units (supplied on a continuous strip)*
£9.18
(exc. VAT)
£11.02
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 20,000 unit(s) ready to ship
- Plus 999,979,980 unit(s) shipping from 10 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
20 + | £0.459 |
*price indicative
- RS Stock No.:
- 218-2984P
- Mfr. Part No.:
- BSZ0589NSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 17 A | |
Maximum Drain Source Voltage | 30 V | |
Series | OptiMOS™ 5 | |
Package Type | TSDSON-8 FL | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.0044 Ω | |
Maximum Gate Threshold Voltage | 2V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS™ 5 | ||
Package Type TSDSON-8 FL | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0044 Ω | ||
Maximum Gate Threshold Voltage 2V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon N-Channel Power MOSFET. This MOSFET is optimized for high performance Wireless charger.
Low FOMSW for high frequency SMPS
Very low on-resistance RDS(on) @ VGS=4.5 V
100% avalanche tested
Superior thermal resistance
Very low on-resistance RDS(on) @ VGS=4.5 V
100% avalanche tested
Superior thermal resistance