Infineon CoolSiC Dual N-Channel MOSFET Module, 150 A, 1200 V AG-EASY2BM-2 FF8MR12W2M1B11BOMA1
- RS Stock No.:
- 217-7182
- Mfr. Part No.:
- FF8MR12W2M1B11BOMA1
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 217-7182
- Mfr. Part No.:
- FF8MR12W2M1B11BOMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 150 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | AG-EASY2BM-2 | |
| Series | CoolSiC | |
| Mounting Type | Screw Mount | |
| Maximum Drain Source Resistance | 0.05 Ω | |
| Maximum Gate Threshold Voltage | 20V | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 150 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type AG-EASY2BM-2 | ||
Series CoolSiC | ||
Mounting Type Screw Mount | ||
Maximum Drain Source Resistance 0.05 Ω | ||
Maximum Gate Threshold Voltage 20V | ||
Number of Elements per Chip 2 | ||
The Infineon EasyDUA 2B 1200 V, 8 mΩ half bridge module with CoolSiC MOSFET, NTC temperature sensor and pressFIT contact technology. It is also available with thermal interface material.
High current density
Best in class switching and conduction losses
Low inductive design
RoHS-compliant modules
Highest efficiency for reduced cooling effort
Higher frequency operation
Increased power density
Optimized customer’s development cycle time and cost
Best in class switching and conduction losses
Low inductive design
RoHS-compliant modules
Highest efficiency for reduced cooling effort
Higher frequency operation
Increased power density
Optimized customer’s development cycle time and cost
