Infineon CoolSiC Dual N-Channel MOSFET Module, 100 A, 1200 V AG-EASY1B FF11MR12W1M1B11BOMA1
- RS Stock No.:
- 217-7179P
- Mfr. Part No.:
- FF11MR12W1M1B11BOMA1
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 217-7179P
- Mfr. Part No.:
- FF11MR12W1M1B11BOMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | AG-EASY1B | |
| Series | CoolSiC | |
| Mounting Type | Screw Mount | |
| Maximum Drain Source Resistance | 0.016 Ω | |
| Maximum Gate Threshold Voltage | 20V | |
| Number of Elements per Chip | 2 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type AG-EASY1B | ||
Series CoolSiC | ||
Mounting Type Screw Mount | ||
Maximum Drain Source Resistance 0.016 Ω | ||
Maximum Gate Threshold Voltage 20V | ||
Number of Elements per Chip 2 | ||
The Infineon EasyDUAL 1B 1200 V, 11 mΩ half bridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology.
High current density
Best in class switching and conduction losses
Low inductive design
Highest efficiency for reduced cooling effort
Higher frequency operation
Increased power density
Optimized customer’s development cycle time and cost
Best in class switching and conduction losses
Low inductive design
Highest efficiency for reduced cooling effort
Higher frequency operation
Increased power density
Optimized customer’s development cycle time and cost