Infineon HEXFET N-Channel MOSFET, 170 A, 75 V, 3-Pin DPAK IRFS3207TRLPBF
- RS Stock No.:
- 217-2629P
- Mfr. Part No.:
- IRFS3207TRLPBF
- Brand:
- Infineon
Subtotal 5 units (supplied on a continuous strip)*
£10.64
(exc. VAT)
£12.77
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2,345 unit(s) shipping from 13 October 2025
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Units | Per unit |
---|---|
5 + | £2.128 |
*price indicative
- RS Stock No.:
- 217-2629P
- Mfr. Part No.:
- IRFS3207TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 170 A | |
Maximum Drain Source Voltage | 75 V | |
Series | HEXFET | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 4.5 mO | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 170 A | ||
Maximum Drain Source Voltage 75 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.5 mO | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
The Infineon 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.
Improved Gate Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free