Infineon HEXFET N-Channel MOSFET, 86 A, 30 V, 3-Pin DPAK IRFR3709ZTRPBF
- RS Stock No.:
- 217-2622P
- Mfr. Part No.:
- IRFR3709ZTRPBF
- Brand:
- Infineon
Subtotal 25 units (supplied on a continuous strip)*
£4.95
(exc. VAT)
£5.95
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
---|---|
25 + | £0.198 |
*price indicative
- RS Stock No.:
- 217-2622P
- Mfr. Part No.:
- IRFR3709ZTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 86 A | |
Maximum Drain Source Voltage | 30 V | |
Series | HEXFET | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 8.2 mO | |
Maximum Gate Threshold Voltage | 2.25V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 86 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.2 mO | ||
Maximum Gate Threshold Voltage 2.25V | ||
Number of Elements per Chip 1 | ||
The Infineon 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package.
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current