Infineon HEXFET N-Channel MOSFET, 86 A, 30 V, 3-Pin DPAK IRFR3709ZTRPBF
- RS Stock No.:
- 217-2622P
- Mfr. Part No.:
- IRFR3709ZTRPBF
- Brand:
- Infineon
Currently unavailable
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- RS Stock No.:
- 217-2622P
- Mfr. Part No.:
- IRFR3709ZTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 86 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | DPAK (TO-252) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8.2 mO | |
| Maximum Gate Threshold Voltage | 2.25V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 86 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.2 mO | ||
Maximum Gate Threshold Voltage 2.25V | ||
Number of Elements per Chip 1 | ||
The Infineon 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package.
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
