Infineon HEXFET N-Channel MOSFET, 100 A, 200 V, 3-Pin TO-247 IRF200P223

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Subtotal 10 units (supplied in a tube)*

£43.16

(exc. VAT)

£51.79

(inc. VAT)

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10 - 20£4.316
25 - 45£4.026
50 - 120£3.734
125 +£3.396

*price indicative

Packaging Options:
RS Stock No.:
217-2596P
Mfr. Part No.:
IRF200P223
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

200 V

Package Type

TO-247

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11.5 mO

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

The Infineon Strong IRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Pb-Free

RoHS Compliant

Halogen-Free

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