Infineon CoolMOS™ N-Channel MOSFET, 24 A, 650 V, 3-Pin D2PAK IPB65R095C7ATMA2
- RS Stock No.:
- 217-2506P
- Mfr. Part No.:
- IPB65R095C7ATMA2
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£33.30
(exc. VAT)
£40.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 225 unit(s) shipping from 06 October 2025
- Plus 999,999,770 unit(s) shipping from 09 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 20 | £3.33 |
| 25 - 45 | £3.112 |
| 50 - 120 | £2.892 |
| 125 + | £2.672 |
*price indicative
- RS Stock No.:
- 217-2506P
- Mfr. Part No.:
- IPB65R095C7ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 24 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS™ | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 95 mO | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 24 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 95 mO | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines thee experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits off a switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Increased MOSFET dv/dt ruggedness
Better efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on)/package
Easy to use/drive
Pb-free plating, halogen free mold compound
Qualified for industrial grade applications according to JEDEC(J-STD20 andJESD22)
Better efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on)/package
Easy to use/drive
Pb-free plating, halogen free mold compound
Qualified for industrial grade applications according to JEDEC(J-STD20 andJESD22)
