Infineon CoolMOS™ N-Channel MOSFET, 8.5 A, 700 V, 3-Pin TO-220 FP IPAN70R600P7SXKSA1
- RS Stock No.:
- 217-2500
- Mfr. Part No.:
- IPAN70R600P7SXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£14.55
(exc. VAT)
£17.45
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 400 unit(s) shipping from 20 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.291 | £14.55 |
| 100 - 200 | £0.283 | £14.15 |
| 250 - 450 | £0.276 | £13.80 |
| 500 - 1200 | £0.269 | £13.45 |
| 1250 + | £0.262 | £13.10 |
*price indicative
- RS Stock No.:
- 217-2500
- Mfr. Part No.:
- IPAN70R600P7SXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8.5 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | TO-220 FP | |
| Series | CoolMOS™ | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 600 mO | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.5 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type TO-220 FP | ||
Series CoolMOS™ | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 600 mO | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
The Infineon 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behaviour.
Extremely low FOM R DS(on) x E oss
lower Q g, E on and E off
Highly performant technology
Low switching losses (E oss)
Highly efficient
Excellent thermal behaviour
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Highly performant technology
Low switching losses (E oss)
Highly efficient
Excellent thermal behaviour
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
