Infineon CoolMOS™ N-Channel MOSFET, 8.4 A, 600 V, 3-Pin TO-220 FP IPAN60R800CEXKSA1
- RS Stock No.:
- 217-2499P
- Mfr. Part No.:
- IPAN60R800CEXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 100 units (supplied in a tube)*
£42.00
(exc. VAT)
£50.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 17 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 180 | £0.42 |
| 200 - 480 | £0.393 |
| 500 - 980 | £0.365 |
| 1000 + | £0.338 |
*price indicative
- RS Stock No.:
- 217-2499P
- Mfr. Part No.:
- IPAN60R800CEXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8.4 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 FP | |
| Series | CoolMOS™ | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 800 mO | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.4 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 FP | ||
Series CoolMOS™ | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 800 mO | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
