Infineon HEXFET N-Channel MOSFET, 10 A, 20 V, 8-Pin SO-8 IRF8910TRPBF
- RS Stock No.:
- 215-2590P
- Mfr. Part No.:
- IRF8910TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 125 units (supplied on a continuous strip)*
£67.75
(exc. VAT)
£81.25
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 29 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 125 - 225 | £0.542 |
| 250 - 600 | £0.519 |
| 625 - 1225 | £0.496 |
| 1250 + | £0.462 |
*price indicative
- RS Stock No.:
- 215-2590P
- Mfr. Part No.:
- IRF8910TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.0134 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.55V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0134 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.55V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon HEXFET Power MOSFET has 20V maximum drain source voltage in a SO-8 package. It has application as dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box.
Lead-Free
Low RDS(on)
Ultra-Low Gate Impedance
Dual N-Channel MOSFET
Low RDS(on)
Ultra-Low Gate Impedance
Dual N-Channel MOSFET
