Infineon HEXFET N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8 IRF7831TRPBF
- RS Stock No.:
- 215-2586P
- Mfr. Part No.:
- IRF7831TRPBF
- Brand:
- Infineon
Save 14% when you buy 1000 units
Subtotal 100 units (supplied on a continuous strip)*
£83.20
(exc. VAT)
£99.80
(inc. VAT)
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In Stock
- 2,600 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 100 - 180 | £0.832 |
| 200 - 480 | £0.797 |
| 500 - 980 | £0.762 |
| 1000 + | £0.71 |
*price indicative
- RS Stock No.:
- 215-2586P
- Mfr. Part No.:
- IRF7831TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.0036 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0036 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon HEXFET Power MOSFET series has 30V maximum drain source voltage in a SO-8 package. It has application high frequency point-of-load synchronous buck converter for applications in networking & computing systems.
RoHS Compliant
Industry-leading quality
Low RDS(ON) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Ultra-Low Gate Impedance
Industry-leading quality
Low RDS(ON) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Ultra-Low Gate Impedance
